75th anniversary of the transistor / [electronic resource] Edited by Arokia Nathan, Samar K. Saha, Ravi M. Todi.
Material type:
TextLanguage: İngilizce Publisher: Hoboken, New Jersey : Wiley, 2023Description: 1 online resource (xxxviii, 438 pages)Content type: - text
- computer
- online resource
- 9781394202478
- Semiconductors
- Electric Power Electronics
- Circuit Theory & Design
- galena detector; transistor invention; transistor history; point-contact transistor; bipolar junction transistor; germanium transistor; silicon transistor; field-effect transistor; FET; metal-oxide-semiconductor FET; MOSFET; complementary MOSFET; CMOS; CMOS technology; MOSFET scaling; scaling challenges; FinFETs; charge-coupled devices; flash memories; tunnel-FETS; junction-less FETs; Electron Devices Society; Solid-State Circuit Society
- TK7871.9 .A18 2023
| Item type | Current library | Home library | Collection | Call number | Status | Date due | Barcode | |
|---|---|---|---|---|---|---|---|---|
Book
|
Merkez Kütüphane | Merkez Kütüphane | E-Kitap Koleksiyonu | TK7871.9 .A18 2023EBK (Browse shelf(Opens below)) | Geçerli değil-e-Kitap / Not applicable-e-Book | EBK03823 |
Browsing Merkez Kütüphane shelves, Collection: E-Kitap Koleksiyonu Close shelf browser (Hides shelf browser)
| TK7871.676 .H26 2020EBK Nanosensors for smart cities / | TK7871.85EBK Contemporary Trends in Semiconductor Devices Theory, Experiment and Applications / | TK7871.86EBK Silicon Sensors and Actuators The Feynman Roadmap / | TK7871.9 .A18 2023EBK 75th anniversary of the transistor / | TK7871.95EBK Advanced SPICE Model for GaN HEMTs (ASM-HEMT) A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design / | TK7871.95EBK RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors | TK7872.D48 L74 2012EBK LTE self-organising networks (SON) : network management automation for operational efficiency / |
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
There are no comments on this title.
